Title :
Progress of Be-based II-VI green to yellow laser diodes
Author :
Tanaka, Shoji ; Kasai, J. ; Fujisaki, S. ; Tsuji, Satoshi ; Akimoto, Ryoichi ; Hasama, Toshifumi ; Ishikawa, Hiroshi
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan
fDate :
June 30 2013-July 4 2013
Abstract :
Be-based II-VI semiconductors can be expected as a laser material with longer lifetimes than conventional ZnSe-based II-VI semiconductors. Continuous-wave operation in green-to-yellow spectral region was demonstrated with BeZnCdSe quantum-well laser diodes. The lasing wavelength of the fabricated green and yellow laser diode was 543 nm and 571 nm, respectively. Light output power over 50 mw has been confirmed with a low threshold current density.
Keywords :
II-VI semiconductors; beryllium compounds; cadmium compounds; current density; optical fabrication; quantum well lasers; wide band gap semiconductors; zinc compounds; Be-based II-VI green laser diodes; Be-based II-VI semiconductors; Be-based II-VI yellow laser diodes; BeZnCdSe; BeZnCdSe quantum-well laser diodes; continuous-wave operation; green-to-yellow spectral region; laser material; lasing wavelength; light output power; threshold current density; wavelength 543 nm; wavelength 571 nm; Diode lasers; Gallium nitride; Power generation; Semiconductor lasers; Substrates; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6599924
