Oxidation of GaAlAs red LED surface due to light irradiation

Author

Shimozaki, Toshitada ; Okino, Takahisa ; Yamane, Masahiro

Author_Institution

Center for Instrum. Anal., Kyushu Inst. of Technol., Kitakyushu, Japan

fYear

1998

fDate

1998

Firstpage

214

Lastpage

217

Abstract

Formation of a light absorptive layer on the surface of a GaAlAs LED due to light irradiation has been studied by irradiating red, green light and infrared ray LEDs on a pellet of a GaAlAs device. The Auger electron spectroscopy depth profiles and electron probe micro analysis have revealed that the light absorptive layer is formed on the n-site surface by the light irradiation. Photocatalysis reactions may play a very important role in the formation of the layer

Keywords

Auger electron spectra; III-V semiconductors; aluminium compounds; catalysis; electron probe analysis; gallium arsenide; light absorption; light emitting diodes; oxidation; photochemistry; radiation effects; surface chemistry; Auger electron spectroscopy depth profiles; GaAlAs; GaAlAs device; GaAlAs red LED surface; GaAlAsO; electron probe micro analysis; light absorptive layer; light irradiation; n-site surface; oxidation; photocatalysis reaction; Atmosphere; Charge carrier processes; Degradation; Electrons; Epoxy resins; Gold; Light emitting diodes; Materials science and technology; Oxidation; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on

Conference_Location

Berkeley, CA

Print_ISBN

0-7803-4354-9

Type

conf

DOI

10.1109/SIM.1998.785110

Filename

785110