Lateral oxidation of AlAs thin films

Author

Liliental-Weber, Z. ; Richter, O. ; Swider, W. ; Li, M. ; Li, G.S. ; Chang-Hasnain, C. ; Weber, E.R.

Author_Institution

Div. of Mater. Sci., Lawrence Berkeley Lab., CA, USA

fYear

1998

fDate

1998

Firstpage

227

Lastpage

230

Abstract

Transmission electron microscopy was used for characterization of microstructure resulting from wet oxidation of AlAs layers of different thicknesses separated by a 20 nm thick GaAs layer. In general, the oxidation rate was related to the AlAs layer thickness, but some deviation from this rule was observed for layer thicknesses in the range of 65 to 30 nm. Accumulation of As precipitates at the AlAs/GaAs/AlAs interfaces and in the GaAs separation layers was observed. A build up of stress at these interfaces occasionally caused formation of stacking faults close to the oxidation front. Large differences in interface abruptness were observed for direct (AlAs on GaAs) and inverted (GaAs on AlAs) interfaces. The oxidation front was asymmetric with the faster front close to the inverted interface

Keywords

III-V semiconductors; aluminium compounds; crystal microstructure; interface structure; oxidation; semiconductor thin films; stacking faults; transmission electron microscopy; 20 to 65 nm; AlAs; AlAs layer thickness; AlAs-GaAs-AlAs; As precipitates; interface abruptness; lateral oxidation; microstructure; stacking faults; thin films; transmission electron microscopy; wet oxidation; Crystallization; Gallium arsenide; Laboratories; Materials science and technology; Microstructure; Molecular beam epitaxial growth; Oxidation; Strips; Transistors; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on

Conference_Location

Berkeley, CA

Print_ISBN

0-7803-4354-9

Type

conf

DOI

10.1109/SIM.1998.785113

Filename

785113