Yellow luminescence under spontaneous and stimulated emission conditions in GaN homostructures and heterostructures

Author

Grieshaber, W. ; Schubert, E. Fred

Author_Institution

Center for Photonics Res., Boston Univ., MA, USA

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

257

Abstract

In addition to the UV band-edge luminescence (3.4 eV), a yellow luminescence band (2.2 eV) has been found in GaN, which has been attributed to a deep level transition. The photoluminescence spectra of OMVPE grown epitaxial n-type GaN at different excitation intensities are reported. Photoreflectance measurements show that the UV luminescence peak at 3.4 eV is an intrinsic band-to-band transition. In addition, the luminescence from GaN and AlGaN/GaN heterostructures is studied in the stimulated emission regime.

Keywords

III-V semiconductors; aluminium compounds; deep levels; gallium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor heterojunctions; spontaneous emission; stimulated emission; 2.2 eV; 3.4 eV; AlGaN-GaN; AlGaN/GaN heterostructures; GaN; GaN homostructures; OMVPE grown epitaxial n-type GaN; UV band-edge luminescence; deep level transition; excitation intensities; intrinsic band-to-band transition; photoluminescence spectra; photoreflectance measurements; spontaneous emission; stimulated emission conditions; yellow luminescence band; Current density; Gallium nitride; Laser excitation; Laser theory; Laser transitions; Luminescence; Photoluminescence; Photonics; Stimulated emission; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565227

Filename

565227