Magneto-gyrotropic effect in semiconductor quantum wells

Author

Ganichev, S.D. ; Bel´kov, V.V. ; Schneider, Petra ; Giglberger, S. ; Danilov, S.N. ; Weber, W. ; Olteanu, M. ; Prettl, W.

Author_Institution

Regensburg Univ., Germany

fYear

2004

fDate

27 Sept.-1 Oct. 2004

Firstpage

131

Lastpage

132

Abstract

A new type of infrared induced photocurrents is reported occurring in gyrotropic quantum wells in the presence of a magnetic field. The effect is caused by spin-orbit interaction and may be observed even for unpolarized radiation. The current occurs for particular relative orientation between magnetic field, current and crystallographic orientation.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; gyromagnetic effect; indium compounds; optical rotation; photoconductivity; photoemission; semiconductor quantum wells; spin-orbit interactions; InAs-AlGaSb; crystallographic orientation; current orientation; gyrotropic quantum wells; infrared induced photocurrents; magnetic field orientation; magneto-gyrotropic effect; semiconductor quantum wells; spin-orbit interaction; unpolarized radiation; Gyrotropism; Laser excitation; Magnetic field measurement; Magnetic fields; Magnetic semiconductors; Magnetic separation; Optical polarization; Optical pumping; Photoconductivity; Photovoltaic effects;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on

Print_ISBN

0-7803-8490-3

Type

conf

DOI

10.1109/ICIMW.2004.1421988

Filename

1421988