Title :
Present status of III-V nitride based light emitting devices
Author_Institution :
Dept. of Res. & Dev., Nichia Chem. Ind. Ltd., Tokushima, Japan
Abstract :
Violet InGaN multi-quantum-well structure laser diodes (LDs) which have the shortest emission wavelength (390-440 nm) among conventional semiconductor LDs have been developed. Typical optical spectra are shown of the InGaN MQW LDs under pulsed current injection at room temperature.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser transitions; quantum well lasers; 390 to 440 nm; III-V nitride based light emitting devices; InGaN; InGaN MQW LD; optical spectra; pulsed current injection; room temperature; shortest emission wavelength; violet InGaN multi-quantum-well structure laser diodes; Brightness; Chemical industry; Commercialization; Diode lasers; III-V semiconductor materials; Light emitting diodes; Optical pulses; Pulse measurements; Quantum well devices; Research and development;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.565236
