DocumentCode
305284
Title
Present status of III-V nitride based light emitting devices
Author
Nakamura, Shuji
Author_Institution
Dept. of Res. & Dev., Nichia Chem. Ind. Ltd., Tokushima, Japan
Volume
1
fYear
1996
fDate
18-21 Nov. 1996
Firstpage
272
Abstract
Violet InGaN multi-quantum-well structure laser diodes (LDs) which have the shortest emission wavelength (390-440 nm) among conventional semiconductor LDs have been developed. Typical optical spectra are shown of the InGaN MQW LDs under pulsed current injection at room temperature.
Keywords
III-V semiconductors; gallium compounds; indium compounds; laser transitions; quantum well lasers; 390 to 440 nm; III-V nitride based light emitting devices; InGaN; InGaN MQW LD; optical spectra; pulsed current injection; room temperature; shortest emission wavelength; violet InGaN multi-quantum-well structure laser diodes; Brightness; Chemical industry; Commercialization; Diode lasers; III-V semiconductor materials; Light emitting diodes; Optical pulses; Pulse measurements; Quantum well devices; Research and development;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-3160-5
Type
conf
DOI
10.1109/LEOS.1996.565236
Filename
565236
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