Title :
Direct generation of Ince-Gaussian beam in Cr, Nd:YAG self-Q-switched microchip laser
Author :
Jun Dong ; Xiao Zhou ; Guozhang Xu
Author_Institution :
Dept. of Electron. Eng., Xiamen Univ., Xiamen, China
fDate :
June 30 2013-July 4 2013
Abstract :
Direct generation of higher-order Ince-Gaussian (IG) beams in laser-diode end-pumped Cr, Nd:YAG self-Q-switched microchip laser was achieved with high efficiency and high repetition rate.
Keywords :
Q-switching; chromium; laser beams; microchip lasers; neodymium; optical pumping; yttrium compounds; YAG:Cr,Nd; direct generation; higher-order Ince-Gaussian beams; laser-diode end-pumped; self-Q-switched microchip laser; Laser beams; Laser excitation; Laser modes; Microchip lasers; Power generation; Power lasers; Pump lasers;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6599935
