Title :
Step-controlled epitaxial growth of SiC and its conductivity control
Author :
Matsunami, Hiroyuki ; Kimoto, Tsunenobu
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan
Abstract :
Polytype-controlled epitaxial growth of SiC is achieved by utilizing step-flow growth on off-oriented SiC(0001) substrates. High-quality of SiC epilayers has been elucidated through photoluminescence, Hall effect, and deep level analyses. The background doping level of undoped epilayers can be reduced down to 0.5~2×10 14 cm-3. In-situ n- and p-type impurity doping from the 1015 to 1019cm-3 range has been realized. In ion implantation of nitrogen donors and aluminum/boron acceptors, high-temperature annealing is a key issue to obtain nearly perfect electrical activation. Vanadium ion implantation can successfully be applied to form semi-insulating SiC layers
Keywords :
Hall effect; annealing; chemical vapour deposition; deep levels; electrical conductivity; impurity states; ion implantation; photoluminescence; polymorphism; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; wide band gap semiconductors; Hall effect; SiC; SiC step-controlled epitaxial growth; aluminum/boron acceptors; background doping level; conductivity control; deep level; epilayers; high-temperature annealing; ion implantation; n-type impurity doping; nearly perfect electrical activation; nitrogen donors; off-oriented SiC(0001) substrates; p-type impurity doping; photoluminescence; polytype-controlled epitaxial growth; semi-insulating SiC layers; step-flow growth; undoped epilayers; vanadium ion implantation; Conductivity; Doping; Epitaxial growth; Hall effect; Impurities; Ion implantation; Nitrogen; Photoluminescence; Silicon carbide; Substrates;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785122
