Title :
Stresses in 3C-SiC films grown on Si substrates
Author :
Jacob, Chacko ; Pirouz, Pirouz
Author_Institution :
Dept. of Mater. Sci. & Eng., Case Western Reserve Univ., Cleveland, OH, USA
Abstract :
3C-SiC films were grown epitaxially on Si(001) substrates by an atmospheric pressure chemical vapor deposition method. The stresses in the films were determined by Raman spectroscopy and compared to data from load-deflection measurements on similar films. The films are tensile as grown and have a stress of 0.3 GPa, which is lower than the reported values for similar films. A possible explanation for the lower stresses as well as other observed trends is suggested
Keywords :
CVD coatings; Raman spectra; internal stresses; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors; 3C-SiC films; Raman spectroscopy; Si; Si substrates; SiC; atmospheric pressure chemical vapor deposition method; load-deflection measurements; stresses; tensile stress; Atmospheric measurements; Inductors; Raman scattering; Residual stresses; Semiconductor films; Spectroscopy; Stress measurement; Substrates; Tensile stress; Thermal stresses;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA, USA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785124
