DocumentCode
305303
Title
Continuous wave operation of GaInNAs laser diode at room temperature
Author
Kondow, M. ; Nakatsuka, S. ; Kitatani, T. ; Yazawa, Y. ; Okai, M.
Author_Institution
RWCP Optoelectron. Lab., Hitachi Ltd., Tokyo, Japan
Volume
1
fYear
1996
fDate
18-21 Nov. 1996
Firstpage
310
Abstract
Summary form only given. We have succeeded in continuous wave (CW) operation of a GaInNAs single active layer QW laser diode at room temperature, for the first time. The use of GaInNAs greatly improved the high temperature performance of long-wavelength-range laser diodes. Thus, the applicatability of GaInNAs, which is a novel material for laser diodes used in optical-fiber communications, was demonstrated.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical transmitters; quantum well lasers; CW lasers; CW operation; GaInNAs laser diode; GaInNAs single active layer QW laser diode; continuous wave operation; high temperature performance; long-wavelength-range laser diodes; optical transmitters; optical-fiber communications; room temperature; Diode lasers; Electrons; Gallium arsenide; Indium phosphide; Laboratories; Optical buffering; Optical materials; Substrates; Temperature distribution; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-3160-5
Type
conf
DOI
10.1109/LEOS.1996.565256
Filename
565256
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