Title :
Continuous wave operation of GaInNAs laser diode at room temperature
Author :
Kondow, M. ; Nakatsuka, S. ; Kitatani, T. ; Yazawa, Y. ; Okai, M.
Author_Institution :
RWCP Optoelectron. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
Summary form only given. We have succeeded in continuous wave (CW) operation of a GaInNAs single active layer QW laser diode at room temperature, for the first time. The use of GaInNAs greatly improved the high temperature performance of long-wavelength-range laser diodes. Thus, the applicatability of GaInNAs, which is a novel material for laser diodes used in optical-fiber communications, was demonstrated.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical transmitters; quantum well lasers; CW lasers; CW operation; GaInNAs laser diode; GaInNAs single active layer QW laser diode; continuous wave operation; high temperature performance; long-wavelength-range laser diodes; optical transmitters; optical-fiber communications; room temperature; Diode lasers; Electrons; Gallium arsenide; Indium phosphide; Laboratories; Optical buffering; Optical materials; Substrates; Temperature distribution; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.565256
