A new technique for the detection of structural defects in SiC bulk crystals

Author

Argunova, T.S. ; Baruchel, J. ; Hartwig, J.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

fYear

1998

fDate

1998

Firstpage

287

Lastpage

290

Abstract

Structural defects in sublimation sandwich grown SiC wafers of a large area have been studied with diffraction, absorption and phase contrast imaging techniques by using highly parallel X-ray flux. The contrast appeared due to either tilt, strain or density gradients between a matrix and a defect. Coherence properties of hard X-ray beams of third-generation synchrotron radiation sources such as the ESRF, were utilized to produce phase contrast in a free-space propagation mode. The nature of the observed defects has been confirmed by scanning electron and optical microscopy data

Keywords

X-ray diffraction; crystal defects; silicon compounds; wide band gap semiconductors; SiC; SiC bulk crystals; absorption; coherence properties; free-space propagation mode; hard X-ray beams; highly parallel X-ray flux diffraction; phase contrast imaging; structural defects; sublimation sandwich grown SiC wafers; third-generation synchrotron radiation sources; Capacitive sensors; Coherence; Electromagnetic wave absorption; Optical imaging; Optical microscopy; Optical propagation; Silicon carbide; Synchrotron radiation; X-ray diffraction; X-ray imaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on

Conference_Location

Berkeley, CA

Print_ISBN

0-7803-4354-9

Type

conf

DOI

10.1109/SIM.1998.785127

Filename

785127