Temperature characteristics of GaAsP/AlGaAs tensile strained quantum well lasers

Author

Tolliver, Todd R. ; Anderson, Neal G. ; Agahi, Farid ; Lau, Kei May

Author_Institution

Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

312

Abstract

In this work, we experimentally study the temperature characteristics of tensile-strained GaAsP-AlGaAs single-quantum-well-heterostructure (SQWH) laser diodes. Specifically, we systematically examine the dependence of the characteristic temperature (T/sub O/) on the quantum well composition in broad-area stripe lasers with identical quantum well widths (115 /spl Aring/) and cavity lengths (750 /spl mu/m).

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; laser cavity resonators; laser stability; quantum well lasers; tensile strength; 115 A; 750 mum; GaAsP-AlGaAs; GaAsP-AlGaAs single-quantum-well-heterostructure laser diodes; GaAsP/AlGaAs tensile strained quantum well lasers; broad-area stripe lasers; cavity lengths; identical quantum well widths; quantum well composition; temperature characteristics; Bars; Diode lasers; Laser theory; Quantum well lasers; Temperature dependence; Temperature distribution; Temperature measurement; Temperature sensors; Tensile strain; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565257

Filename

565257