Title :
Prediction of random dopant induced threshold voltage fluctuations in NanoCMOS transistors
Author :
Reid, Dave ; Millar, C. ; Roy, Goutam ; Roy, Sandip ; Sinnott, Richard ; Stewart, George ; Stewart, George ; Asenov, Asen
Author_Institution :
Device Modelling Group, Univ. of Glasgow, Glasgow
Abstract :
The detailed analysis of a ground-breaking sample of 100,000 n-Channel MOSFETs, simulated with the Glasgow 3D device simulator, has allowed the distribution of random discrete dopant induced threshold voltage fluctuations to be constructed based on underlying physical processes. The construction may also be statistically enhanced, allowing a significant reduction in the computational effort necessary to accurately model random discrete dopant induced variability.
Keywords :
CMOS integrated circuits; MOSFET; circuit simulation; nanoelectronics; Glasgow 3D device simulator; n-channel MOSFET; nanoCMOS transistors; random dopant induced threshold voltage fluctuations; Analytical models; Circuit simulation; Computational modeling; Fluctuations; MOSFETs; Nanoscale devices; Predictive models; Probability distribution; Semiconductor process modeling; Threshold voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648227
