Title :
Residual strain in a zinc blende Mn1-xMgxTe layers grown by molecular beam epitaxy
Author :
Dynowska, E. ; Bak-Misiuk, J. ; Janik, E. ; Trela, J. ; Wojtowicz, T.
Author_Institution :
Inst. of Phys., Polish Acad. of Sci., Warsaw, Poland
Abstract :
The residual strain in Mn1-xMgTe layers grown by Molecular Beam Epitaxy (MBE) on CdTe/GaAs(001) substrates has been investigated by X-ray diffraction methods. We confirmed the existence of a tensile strain in the case of layers covered by an additional CdTe cap while in uncapped layers we found a compressive strain. The thermal expansion measurements between 300-520 K revealed an anisotropy of the inplane and out-of-plane thermal expansion coefficients. This helps to understand occurrence of the compressive strain of uncapped layers in terms of a tentative model of relaxation process in both types of layers
Keywords :
X-ray diffraction; magnesium compounds; manganese compounds; molecular beam epitaxial growth; semimagnetic semiconductors; stress-strain relations; thermal expansion; (MnMg)Te; 300 to 520 K; MBE; X-ray diffraction methods; compressive strain; molecular beam epitaxy; residual strain; tensile strain; thermal expansion; zinc blende Mn1-xMgxTe layer; Capacitive sensors; Crystallization; Lattices; Molecular beam epitaxial growth; Strain measurement; Temperature distribution; Tensile strain; Thermal expansion; X-ray diffraction; Zinc;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785129
