Lasing characteristics of GaAs/AlGaAs quantum wire laser and its array with an effective p-n junction current blocking layer

Author

Kim, Tae Geun ; Kim, Eun Kyu ; Son, Chang-Sik ; Kim, Seong-II ; Jeong, Jichai ; Min, Suk-Ki ; Leem, Si-Jong ; Jun, Jong, II ; Lee, Hae Wang ; Park, Jung-Ho ; Seong, Tae-Yeon ; Jun, Sung Won

Author_Institution

Semicond. Mater. Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

326

Abstract

We report quantum wire (QWR) diode lasers incorporating a p-n junction blocking layer between buffer layers, instead of proton implantation. A n-GaAs buffer and a 2-/spl mu/m-thick p-GaAs QW layer for current blocking were grown on (100) GaAs substrates. Structure and optical properties of the QWR have been investigated using transmission electron microscopy (TEM) and low temperature photoluminescence (PL).

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; optical testing; p-n junctions; photoluminescence; quantum well lasers; semiconductor device testing; semiconductor laser arrays; semiconductor quantum wires; transmission electron microscopy; (100) GaAs substrates; 2 mum; GaAs; GaAs-AlGaAs; GaAs-AlGaAs quantum wire laser; TEM; buffer layers; current blocking; diode lasers; effective p-n junction current blocking layer; laser variables measurement; low temperature photoluminescence; n-GaAs buffer; optical properties; optical testing; p-GaAs QW layer; semiconductor laser arrays; transmission electron microscopy; Buffer layers; Diode lasers; Electron optics; Gallium arsenide; Optical buffering; Optical microscopy; P-n junctions; Protons; Transmission electron microscopy; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565265

Filename

565265