DocumentCode
3053138
Title
Metastable defects in CdMnTe:Ga
Author
Szatkowski, J. ; Placzek-Popko, E. ; Sieranski, K. ; Bieg, B.
Author_Institution
Inst. of Phys., Wroclaw Univ., Poland
fYear
1998
fDate
1998
Firstpage
309
Lastpage
312
Abstract
Deep levels were studied in bulk Ga doped Cd0.99Mn0.01Te and Cd0.95Mn0.05 Te by DLTS method. Some of observed electron traps had strong temperature dependent capture cross-sections. Activation energies for these levels obtained from Arrhenius plots were equal 0.24 eV for both types of samples and 0.53 eV in Cd0.95Mn0.05Te. Energetic barriers for capture processes determined from the temperature dependence of capture cross sections for these traps were found to be equal 0.2 eV for the level in Cd0.99Mn0.01Te and 0.15 eV and 0.23 eV for the two levels in Cd0.95Mn0.05 Te. These traps are possible candidates responsible for persistent photoconductivity observed in both materials
Keywords
cadmium compounds; deep levels; gallium; manganese compounds; metastable states; photoconductivity; semimagnetic semiconductors; 0.24 eV; 0.53 eV; Cd0.95Mn0.05Te; Cd0.95Mn0.05Te:Ga; Cd0.99Mn0.01Te; Cd0.99Mn0.01Te:Ga; CdMnTe:Ga; activation energies; by us; deep levels; electron traps; metastable defects; persistent photoconductivity; strong temperature dependent capture cross-sections; Electron traps; Energy capture; Gallium; Manganese; Metastasis; Photoconducting materials; Photoconductivity; Physics; Spectroscopy; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location
Berkeley, CA
Print_ISBN
0-7803-4354-9
Type
conf
DOI
10.1109/SIM.1998.785132
Filename
785132
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