Title :
Modeling the VTH fluctuations in nanoscale Floating Gate memories
Author :
Calderoni, A. ; Fantini, P. ; Ghetti, A. ; Marmiroli, A.
Author_Institution :
R&D - Technol. Dev., Numonyx, Agrate Brianza
Abstract :
Tight bits distribution is a must to fabricate multi-level Non-Volatile Memory (NVM) technology needed to reach a high degree of integration. On the contrary, the Non-Volatile cell shrink to nanoscale sizes produces a huge modulation in the device performances when atomistic scale fluctuations occur. The present work provides a new physically-based model allowing describing, through a simple analytical approach, the statistical VTH spread for Floating Gate based NVM technologies with nanoscale dimensions.
Keywords :
integrated circuit modelling; random-access storage; VTH fluctuations modelling; atomistic scale fluctuations; nanoscale floating gate memories; non-volatile memory technology; tight bits distribution; Current measurement; Flash memory; Fluctuations; Nanoscale devices; Nonvolatile memory; Research and development; Semiconductor device measurement; Signal to noise ratio; Statistical distributions; Threshold voltage; Fluctuations; Modeling; Noise; Non-Volatile Memory; Statistical distribution;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648234
