Persistent photoconductivity in nitrogen-doped p-type Zn(S)Se/GaAs heterojunctions

Author

Seghier, D. ; Gislason, H.P.

Author_Institution

Sci. Inst., Iceland Univ., Reykjavik, Iceland

fYear

1998

fDate

1998

Firstpage

313

Lastpage

316

Abstract

Nitrogen-doped p-type ZnSe grown by molecular beam epitaxy on p-type GaAs shows persistent photocurrent up to room temperature. A typical decay consists of an initial stretched-exponential transient with a thermally activated decay constant, and a subsequent long transient. We attribute the effect to metastable centers in the ZnSe near the interface to the GaAs substrate, on the one hand, and tunneling of photo-excited holes trapped in a two-dimensional quantum well at the heterojunction through the barrier to the ZnSe, on the other hand

Keywords

II-VI semiconductors; III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; nitrogen; photoconductivity; semiconductor growth; semiconductor heterojunctions; zinc compounds; ZnS:N-GaAs; ZnSe:N; ZnSe:N-GaAs; p-type Zn(S)Se/GaAs heterojunctions; persistent photoconductivity; photo-excited holes; stretched-exponential transient; thermally activated decay constant; two-dimensional quantum well; Cooling; Gallium arsenide; Gold; Heterojunctions; Lighting; Molecular beam epitaxial growth; Photoconductivity; Plasma temperature; Substrates; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on

Conference_Location

Berkeley, CA

Print_ISBN

0-7803-4354-9

Type

conf

DOI

10.1109/SIM.1998.785133

Filename

785133