Title :
Strain compensated InGaAs/GaAsP/InGaP 980 nm lasers with 90% fiber coupling efficiency
Author :
Lopata, J. ; Vakhshoori, D. ; Hobson, W.S. ; Han, H. ; Henein, G.E. ; Wynn, J.D. ; deJong, J. ; Schnoes, M.L. ; Zydzik, G.J.
Author_Institution :
Bell Labs., Lucent Technol., Murray Hill, NJ, USA
Abstract :
We describe a new InGaP/lnGaAs/GaAs quantum well laser structure, the SPIN (Spread INdex) laser design. The figure of merit for the 980 nm Er-doped fiber application is how much power is coupled into the single-mode fiber. This is determined by the beam divergence and external differential quantum efficiency. To this end, the SPIN laser design allows a nearly symmetrical beam divergence, while maintaining high external differential quantum efficiency. The laser structure was grown by low pressure (45 Torr) metalorganic chemical vapor deposition (MOCVD).
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser transitions; optical fibre couplers; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 45 torr; 90 percent; 980 nm; Er-doped fiber application; InGaAs-GaAsP-InGaP; InGaP-InGaAs-GaAs; InGaP/lnGaAs/GaAs quantum well laser structure; SPIN laser design; beam divergence; external differential quantum efficiency.; fiber coupling efficiency; figure of merit; high external differential quantum efficiency; low pressure MOCVD; metalorganic chemical vapor deposition; nearly symmetrical beam divergence; power; single-mode fiber; spread index laser design; strain compensated InGaAs/GaAsP/InGaP 980 nm lasers; Capacitive sensors; Chemical lasers; Chemical vapor deposition; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Laser beams; MOCVD; Optical design; Quantum well lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.565275
