A unified approach for the reliability modeling of MOSFETs

Author

Baek, Chang-Ki ; Choi, SeongWook ; Park, Hong-Hyun ; Woo, Jun-Myung ; Park, Young June ; Hong, Sung-Min ; Park, Chan Hyeong

Author_Institution

Sch. of EECS, Seoul Nat. Univ., Seoul

fYear

2008

fDate

9-11 Sept. 2008

Firstpage

61

Lastpage

64

Abstract

Modeling capabilities and considerations to achieve a unified reliability model (URM) are addressed. The causes of the trap generation and their effects on the device characteristics serve the unified reliability model. A strategy taken in the SNU group based on the CLESICO system is introduced, where the hydrogen transport and trapping in the gate dielectric to form active carrier trapping sites and their effects on the device characteristics such as the current degradation are treated in a systematic and statistical manner. The treatment of the discrete nature of the trapped charges to model the RTS and 1/f noises are also introduced.

Keywords

MOSFET; integrated circuit modelling; integrated circuit reliability; transport processes; CLESICO system; MOSFET; gate dielectric; hydrogen transport; hydrogen trapping; unified reliability model; Acoustic noise; Bridge circuits; Character generation; Degradation; Electron traps; Hydrogen; Leakage current; MOSFETs; Niobium compounds; Titanium compounds; NBTI; RTS; SILC; hydrogen transport; mobility; noise; trapped electron; unified reliabity model (URM);

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on

Conference_Location

Hakone

Print_ISBN

978-1-4244-1753-7

Type

conf

DOI

10.1109/SISPAD.2008.4648237

Filename

4648237