Title :
A unified approach for the reliability modeling of MOSFETs
Author :
Baek, Chang-Ki ; Choi, SeongWook ; Park, Hong-Hyun ; Woo, Jun-Myung ; Park, Young June ; Hong, Sung-Min ; Park, Chan Hyeong
Author_Institution :
Sch. of EECS, Seoul Nat. Univ., Seoul
Abstract :
Modeling capabilities and considerations to achieve a unified reliability model (URM) are addressed. The causes of the trap generation and their effects on the device characteristics serve the unified reliability model. A strategy taken in the SNU group based on the CLESICO system is introduced, where the hydrogen transport and trapping in the gate dielectric to form active carrier trapping sites and their effects on the device characteristics such as the current degradation are treated in a systematic and statistical manner. The treatment of the discrete nature of the trapped charges to model the RTS and 1/f noises are also introduced.
Keywords :
MOSFET; integrated circuit modelling; integrated circuit reliability; transport processes; CLESICO system; MOSFET; gate dielectric; hydrogen transport; hydrogen trapping; unified reliability model; Acoustic noise; Bridge circuits; Character generation; Degradation; Electron traps; Hydrogen; Leakage current; MOSFETs; Niobium compounds; Titanium compounds; NBTI; RTS; SILC; hydrogen transport; mobility; noise; trapped electron; unified reliabity model (URM);
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648237
