Analysis of facet degradation of high power 830 nm laser diodes

Author

Pendse, Deodatta R.

Author_Institution

Polaroid Corp., Norwood, MA, USA

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

354

Abstract

Catastrophic optical damage (COD) and other facet-related degradation of high power 830 nm laser diodes was analyzed. Correlation between COD output power limit and the COD depth into the laser and its application to separate facet-related degradation from bulk degradation is described. The role of coating defects and contamination in the package environment as analyzed by SEM/EDS, Auger etc., is described. The diodes described here are GaAs/AlGaAs single quantum well gain guided lasers.

Keywords

Auger effect; III-V semiconductors; aluminium compounds; electron probe analysis; gallium arsenide; laser reliability; laser transitions; life testing; quantum well lasers; semiconductor device packaging; 830 nm; Auger analysis; COD depth; GaAs-AlGaAs; GaAs/AlGaAs single quantum well gain guided lasers; SEM/EDS; bulk degradation; catastrophic optical damage; coating defects; contamination; facet degradation; high power 830 nm laser diodes; output power limit; package environment; Coatings; Contamination; Degradation; Diode lasers; Gallium arsenide; Laser applications; Packaging; Power generation; Power lasers; Quantum well lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565279

Filename

565279