Title :
Analysis of facet degradation of high power 830 nm laser diodes
Author :
Pendse, Deodatta R.
Author_Institution :
Polaroid Corp., Norwood, MA, USA
Abstract :
Catastrophic optical damage (COD) and other facet-related degradation of high power 830 nm laser diodes was analyzed. Correlation between COD output power limit and the COD depth into the laser and its application to separate facet-related degradation from bulk degradation is described. The role of coating defects and contamination in the package environment as analyzed by SEM/EDS, Auger etc., is described. The diodes described here are GaAs/AlGaAs single quantum well gain guided lasers.
Keywords :
Auger effect; III-V semiconductors; aluminium compounds; electron probe analysis; gallium arsenide; laser reliability; laser transitions; life testing; quantum well lasers; semiconductor device packaging; 830 nm; Auger analysis; COD depth; GaAs-AlGaAs; GaAs/AlGaAs single quantum well gain guided lasers; SEM/EDS; bulk degradation; catastrophic optical damage; coating defects; contamination; facet degradation; high power 830 nm laser diodes; output power limit; package environment; Coatings; Contamination; Degradation; Diode lasers; Gallium arsenide; Laser applications; Packaging; Power generation; Power lasers; Quantum well lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.565279
