Statistical analysis of random telegraph noise in CMOS image sensors

Author

Woo, Jun-Myung ; Hong-Hyun Park ; Min, Hong Shick ; Park, Chan Hyeong ; Hong, Sung-Min ; Chan Hyeong Park

Author_Institution

Sch. of EECS, Seoul Nat. Univ., Seoul

fYear

2008

fDate

9-11 Sept. 2008

Firstpage

77

Lastpage

80

Abstract

We propose a statistical method to predict the dark random readout noise in CMOS image sensors. First, we calculate the dark random noise originated from oxide traps present in the source-follower MOSFET. Statistical variation in the dark noise is associated with the random variation of the oxide defects in the CMOS image sensor cells in both the energy and space domain. Considering the effect of the correlated double sampling, we define the dark random noise as the standard deviation in the time domain and analyze the effect of the MOSFET width and length variations and temperature on its dark random noise.

Keywords

CMOS image sensors; MOSFET; random noise; statistical analysis; CMOS image sensors; dark random readout noise; random telegraph noise; source-follower MOSFET; statistical analysis; CMOS image sensors; Circuit noise; Computational Intelligence Society; Histograms; Image sampling; MOSFET circuits; Noise figure; Statistical analysis; Telegraphy; Time domain analysis; CMOS image sensor (CIS); correlated double sampling (CDS); dark random noise; oxide trap; random telegraph noise (RTN);

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on

Conference_Location

Hakone

Print_ISBN

978-1-4244-1753-7

Type

conf

DOI

10.1109/SISPAD.2008.4648241

Filename

4648241