DocumentCode
3053305
Title
Spin-orbit coupling in gyrotropic quantum wells by far-infrared radiation induced spin-galvanic effect
Author
Ganichev, S.D. ; Kov, V. V Bel ; Schneider, Petra ; Giglberger, S. ; Hoffmann, Ch. ; Prettl, W.
Author_Institution
Regensburg Univ., Germany
fYear
2004
fDate
27 Sept.-1 Oct. 2004
Firstpage
167
Lastpage
168
Abstract
The Rashba effect, whose experimental access is usually masked by the Dresselhaus effect, allows manipulation of spins in semiconductor spintronics. Based on the far-infrared radiation induced spin-galvanic effect, we present a unique way to separate both types of spin-orbit coupling.
Keywords
III-V semiconductors; aluminium compounds; band structure; gallium compounds; indium compounds; magnetoelectronics; radiation effects; semiconductor quantum wells; spin-orbit interactions; Dresselhaus effect; InAs-AlGaSb; Rashba effect; far infrared radiation; gyrotropic quantum wells; semiconductor spintronics; spin galvanic effect; spin-orbit coupling; Charge carriers; Conductors; Control systems; Dispersion; Electrons; Galvanizing; Gyrotropism; Magnetoelectronics; Photoconductivity; Shape measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN
0-7803-8490-3
Type
conf
DOI
10.1109/ICIMW.2004.1422006
Filename
1422006
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