Title :
Spin-orbit coupling in gyrotropic quantum wells by far-infrared radiation induced spin-galvanic effect
Author :
Ganichev, S.D. ; Kov, V. V Bel ; Schneider, Petra ; Giglberger, S. ; Hoffmann, Ch. ; Prettl, W.
Author_Institution :
Regensburg Univ., Germany
fDate :
27 Sept.-1 Oct. 2004
Abstract :
The Rashba effect, whose experimental access is usually masked by the Dresselhaus effect, allows manipulation of spins in semiconductor spintronics. Based on the far-infrared radiation induced spin-galvanic effect, we present a unique way to separate both types of spin-orbit coupling.
Keywords :
III-V semiconductors; aluminium compounds; band structure; gallium compounds; indium compounds; magnetoelectronics; radiation effects; semiconductor quantum wells; spin-orbit interactions; Dresselhaus effect; InAs-AlGaSb; Rashba effect; far infrared radiation; gyrotropic quantum wells; semiconductor spintronics; spin galvanic effect; spin-orbit coupling; Charge carriers; Conductors; Control systems; Dispersion; Electrons; Galvanizing; Gyrotropism; Magnetoelectronics; Photoconductivity; Shape measurement;
Conference_Titel :
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN :
0-7803-8490-3
DOI :
10.1109/ICIMW.2004.1422006
