• DocumentCode
    3053347
  • Title

    Self-consistent simulation of Schottky Barrier SpinFET

  • Author

    Liu, Jianhua ; Du, Gang ; Cao, Ji ; Wang, Yi ; Feng, Jin ; Kang ; Han, Ruqi ; Liu, Xiaoyan

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing
  • fYear
    2008
  • fDate
    9-11 Sept. 2008
  • Firstpage
    85
  • Lastpage
    88
  • Abstract
    In this paper, we proposed a self-consistent simulator based on Monte Carlo method for performance simulation of SpinFET. In SpinFET, the dominant spin dephasing mechanism is the so called DP(Dpsilayakonov-Perelpsila) mechanism, including Dresselhaus effect and Rashba effect. These effects are closely related to the 2-dimensional electron gas (2DEG) in the channel, especially to its envelop function. Considering this, we introduced self-consistent Poisson-Schrodinger solver into our simulator to obtain 2DEGpsilas envelop wave function and precise spin precession frequency. Using the simulator, we investigated the SpinFET performance dependence on spin injection directions, channel materials and source/drain materials. Based on our simulation results, we proposed some design guidelines for SpinFET.
  • Keywords
    Monte Carlo methods; Schottky barriers; Schottky gate field effect transistors; high electron mobility transistors; semiconductor process modelling; spin polarised transport; wave functions; 2-dimensional electron gas; DP(Dpsilayakonov-Perelpsila) mechanism; Dresselhaus effect; Monte Carlo method; Rashba effect; Schottky barrier spinFET; channel materials; envelop wave function; self-consistent Poisson-Schrodinger solver; source-drain materials; spin dephasing mechanism; spin injection directions; spin precession frequency; Acoustic scattering; Conductivity; Electrons; FETs; Gallium arsenide; Particle scattering; Phonons; Schottky barriers; Spin polarized transport; Wave functions; DP mechansim; Dresselhaus and Rashba effects; GaAs; InSb; SpinFET; half metalic materials; schottky barrier; self-consistent Poisson-Schrödinger solver; spin precession;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
  • Conference_Location
    Hakone
  • Print_ISBN
    978-1-4244-1753-7
  • Type

    conf

  • DOI
    10.1109/SISPAD.2008.4648243
  • Filename
    4648243