DocumentCode :
3053347
Title :
Self-consistent simulation of Schottky Barrier SpinFET
Author :
Liu, Jianhua ; Du, Gang ; Cao, Ji ; Wang, Yi ; Feng, Jin ; Kang ; Han, Ruqi ; Liu, Xiaoyan
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
fYear :
2008
fDate :
9-11 Sept. 2008
Firstpage :
85
Lastpage :
88
Abstract :
In this paper, we proposed a self-consistent simulator based on Monte Carlo method for performance simulation of SpinFET. In SpinFET, the dominant spin dephasing mechanism is the so called DP(Dpsilayakonov-Perelpsila) mechanism, including Dresselhaus effect and Rashba effect. These effects are closely related to the 2-dimensional electron gas (2DEG) in the channel, especially to its envelop function. Considering this, we introduced self-consistent Poisson-Schrodinger solver into our simulator to obtain 2DEGpsilas envelop wave function and precise spin precession frequency. Using the simulator, we investigated the SpinFET performance dependence on spin injection directions, channel materials and source/drain materials. Based on our simulation results, we proposed some design guidelines for SpinFET.
Keywords :
Monte Carlo methods; Schottky barriers; Schottky gate field effect transistors; high electron mobility transistors; semiconductor process modelling; spin polarised transport; wave functions; 2-dimensional electron gas; DP(Dpsilayakonov-Perelpsila) mechanism; Dresselhaus effect; Monte Carlo method; Rashba effect; Schottky barrier spinFET; channel materials; envelop wave function; self-consistent Poisson-Schrodinger solver; source-drain materials; spin dephasing mechanism; spin injection directions; spin precession frequency; Acoustic scattering; Conductivity; Electrons; FETs; Gallium arsenide; Particle scattering; Phonons; Schottky barriers; Spin polarized transport; Wave functions; DP mechansim; Dresselhaus and Rashba effects; GaAs; InSb; SpinFET; half metalic materials; schottky barrier; self-consistent Poisson-Schrödinger solver; spin precession;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
Type :
conf
DOI :
10.1109/SISPAD.2008.4648243
Filename :
4648243
Link To Document :
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