DocumentCode
3053347
Title
Self-consistent simulation of Schottky Barrier SpinFET
Author
Liu, Jianhua ; Du, Gang ; Cao, Ji ; Wang, Yi ; Feng, Jin ; Kang ; Han, Ruqi ; Liu, Xiaoyan
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing
fYear
2008
fDate
9-11 Sept. 2008
Firstpage
85
Lastpage
88
Abstract
In this paper, we proposed a self-consistent simulator based on Monte Carlo method for performance simulation of SpinFET. In SpinFET, the dominant spin dephasing mechanism is the so called DP(Dpsilayakonov-Perelpsila) mechanism, including Dresselhaus effect and Rashba effect. These effects are closely related to the 2-dimensional electron gas (2DEG) in the channel, especially to its envelop function. Considering this, we introduced self-consistent Poisson-Schrodinger solver into our simulator to obtain 2DEGpsilas envelop wave function and precise spin precession frequency. Using the simulator, we investigated the SpinFET performance dependence on spin injection directions, channel materials and source/drain materials. Based on our simulation results, we proposed some design guidelines for SpinFET.
Keywords
Monte Carlo methods; Schottky barriers; Schottky gate field effect transistors; high electron mobility transistors; semiconductor process modelling; spin polarised transport; wave functions; 2-dimensional electron gas; DP(Dpsilayakonov-Perelpsila) mechanism; Dresselhaus effect; Monte Carlo method; Rashba effect; Schottky barrier spinFET; channel materials; envelop wave function; self-consistent Poisson-Schrodinger solver; source-drain materials; spin dephasing mechanism; spin injection directions; spin precession frequency; Acoustic scattering; Conductivity; Electrons; FETs; Gallium arsenide; Particle scattering; Phonons; Schottky barriers; Spin polarized transport; Wave functions; DP mechansim; Dresselhaus and Rashba effects; GaAs; InSb; SpinFET; half metalic materials; schottky barrier; self-consistent Poisson-Schrödinger solver; spin precession;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location
Hakone
Print_ISBN
978-1-4244-1753-7
Type
conf
DOI
10.1109/SISPAD.2008.4648243
Filename
4648243
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