Title :
High-speed, low-noise resonant-cavity avalanche photodiodes
Author :
Nie, Hui ; Anselm, K.A. ; Hu, C. ; Streetman, B.G. ; Campbell, J.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
In this paper we describe a separate absorption and multiplication (SAM) avalanche photodiode (APD) in a resonant-cavity configuration. This APD has achieved low noise and record bandwidths. In the low-gain regime, bandwidths >20 GHz were observed. The gain-bandwidth product was 130 GHz, which is the highest reported for a bulk multiplication region and comparable to the best multiple-quantum-well APDs.
Keywords :
avalanche photodiodes; optical noise; optical resonators; semiconductor device noise; bulk multiplication region; gain-bandwidth product; high-speed low-noise resonant-cavity avalanche photodiodes; low noise; low-gain regime; record bandwidths; resonant-cavity configuration; separate absorption and multiplication avalanche photodiode; Absorption; Avalanche photodiodes; Bandwidth; Breakdown voltage; Charge carrier processes; Ionization; Mirrors; Optical noise; Resonance; Signal to noise ratio;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.565298
