• DocumentCode
    3053454
  • Title

    Controlling inhibited spontaneous emission of InAs/InP nanowires in different environment

  • Author

    Birowosuto, M.D. ; Zhang, Ge ; Yokoo, A. ; Takiguchi, M. ; Notomi, M.

  • Author_Institution
    NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
  • fYear
    2013
  • fDate
    June 30 2013-July 4 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We experimentally investigate the inhibited spontaneous emission of telecom-band InAs quantum disks in InP nanowires near gold, SiO2, and silicon interfaces. We have evaluated how the inhibition is affected by different interfaces and disk thickness.
  • Keywords
    III-V semiconductors; gold; indium compounds; nanowires; semiconductor quantum wires; silicon compounds; spontaneous emission; Au; InAs-InP; SiO2; disk thickness; inhibited spontaneous emission; nanowires; telecom-band quantum disks; Films; Gold; Indium phosphide; Nanowires; Silicon; Spontaneous emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
  • Conference_Location
    Kyoto
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2013.6599959
  • Filename
    6599959
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3053454