Source/drain engineering for high-performance deep sub-100nm Ge-pMOSFETs using Full-Band Monte Carlo simulation

Author

Takeda, Hiroshi ; Ikezawa, Takeo ; Kawada, Michihito ; Hane, Masami

Author_Institution

LSI Fundamental Res. Lab., NEC Electron. Corp., Sagamihara

fYear

2008

fDate

9-11 Sept. 2008

Firstpage

113

Lastpage

116

Abstract

Full-band Monte Carlo simulation was performed to explore the optimal source/drain (SD) structure for deep sub-100 nm Ge-pMOSFETs. Comparing the source-to-channel carrier injection characteristics of metal SD and conventional pn-junction SD devices, suitable SD structure for high-performance Ge-devices were discussed. MSD devices outperform pn-SD ones in the ldquoSchottkyrdquo SD condition while they exhibit almost the same device characteristics in the ldquoohmicrdquo SD condition.

Keywords

MOSFET; Monte Carlo methods; charge injection; Ge; Schottky source-drain condition; full-band Monte Carlo simulation; high-performance deep subnanometer pMOSFET; ohmic source-drain condition; source-drain engineering; source-to-channel carrier injection; Charge carrier density; Doping; Large scale integration; Monte Carlo methods; National electric code; Phonons; Rough surfaces; Schottky barriers; Surface roughness; Tunneling; Ge; MOSFET; Monte Carlo; Schottky; full-band; metal source/drain;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on

Conference_Location

Hakone

Print_ISBN

978-1-4244-1753-7

Type

conf

DOI

10.1109/SISPAD.2008.4648250

Filename

4648250