Title :
Source/drain engineering for high-performance deep sub-100nm Ge-pMOSFETs using Full-Band Monte Carlo simulation
Author :
Takeda, Hiroshi ; Ikezawa, Takeo ; Kawada, Michihito ; Hane, Masami
Author_Institution :
LSI Fundamental Res. Lab., NEC Electron. Corp., Sagamihara
Abstract :
Full-band Monte Carlo simulation was performed to explore the optimal source/drain (SD) structure for deep sub-100 nm Ge-pMOSFETs. Comparing the source-to-channel carrier injection characteristics of metal SD and conventional pn-junction SD devices, suitable SD structure for high-performance Ge-devices were discussed. MSD devices outperform pn-SD ones in the ldquoSchottkyrdquo SD condition while they exhibit almost the same device characteristics in the ldquoohmicrdquo SD condition.
Keywords :
MOSFET; Monte Carlo methods; charge injection; Ge; Schottky source-drain condition; full-band Monte Carlo simulation; high-performance deep subnanometer pMOSFET; ohmic source-drain condition; source-drain engineering; source-to-channel carrier injection; Charge carrier density; Doping; Large scale integration; Monte Carlo methods; National electric code; Phonons; Rough surfaces; Schottky barriers; Surface roughness; Tunneling; Ge; MOSFET; Monte Carlo; Schottky; full-band; metal source/drain;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648250
