DocumentCode
3053515
Title
Impact of inhomogeneous strain on the valence band structures of Ge-Si core-shell nanowires
Author
He, Yuhui ; Fan, Chun ; Zhao, Yu Ning ; Du, Gang ; Liu, Xiao Yan ; Han, Ruqi
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing
fYear
2008
fDate
9-11 Sept. 2008
Firstpage
121
Lastpage
124
Abstract
We report on a theoretical study of the valence band structures of germanium-silicon core-shell nanowires based on a 6times6 kldrp model. We take into account the inhomogeneous strain effects induced by the lattice mismatches between germanium and silicon. We find that the top subband ends drift back to Gamma point, and the effective masses of more subbands begin to decrease when the shell thickness increases.
Keywords
Ge-Si alloys; nanowires; valence bands; core shell nanowires; inhomogeneous strain; lattice mismatches; valence band structures; Capacitive sensors; Carbon nanotubes; Effective mass; Finite element methods; Germanium silicon alloys; Lattices; Microelectronics; Nanowires; Silicon germanium; Tensile stress; core-shell nanowire; strain effect; valence band;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location
Hakone
Print_ISBN
978-1-4244-1753-7
Type
conf
DOI
10.1109/SISPAD.2008.4648252
Filename
4648252
Link To Document