Title :
Impact of inhomogeneous strain on the valence band structures of Ge-Si core-shell nanowires
Author :
He, Yuhui ; Fan, Chun ; Zhao, Yu Ning ; Du, Gang ; Liu, Xiao Yan ; Han, Ruqi
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
We report on a theoretical study of the valence band structures of germanium-silicon core-shell nanowires based on a 6times6 kldrp model. We take into account the inhomogeneous strain effects induced by the lattice mismatches between germanium and silicon. We find that the top subband ends drift back to Gamma point, and the effective masses of more subbands begin to decrease when the shell thickness increases.
Keywords :
Ge-Si alloys; nanowires; valence bands; core shell nanowires; inhomogeneous strain; lattice mismatches; valence band structures; Capacitive sensors; Carbon nanotubes; Effective mass; Finite element methods; Germanium silicon alloys; Lattices; Microelectronics; Nanowires; Silicon germanium; Tensile stress; core-shell nanowire; strain effect; valence band;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648252
