Title :
Is dual gate device structure better from thermal perspective?
Author :
Goodnick, S.M. ; Vasileska, D. ; Raleva, K.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ
Abstract :
Heating effects are investigated in dual-gate devices using an in-house thermal particle-based device simulator. Our simulation results demonstrate that the dual-gate device structure is advantageous even though there is slightly higher current degradation due to lattice heating compared to conventional single gate structures, since the magnitude of the on-current is 1.5-1.8 times larger in this structure. Thus, one can trade off a slight increase in current degradation due to lattice heating for more current drive.
Keywords :
heating; silicon-on-insulator; current degradation; dual gate device structure; heating effects; in-house thermal particle-based device simulator; single gate structures; thermal perspective; Degradation; Doping; Electrons; FETs; Heat engines; Heating; Lattices; Silicon; Switches; Temperature; DG devices; heating effects; hot phonons; particle-based simulations;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648253
