Consistent higher-order transport models for SOI MOSFETs

We have developed a two-dimensional non-parabolic macroscopic transport model up to the sixth order. To model higher-order transport parameters with as few simplifying assumptions as possible, we apply an extraction technique from Subband Monte Carlo simulations followed by an interpolation within these Monte Carlo tables through the whole inversion layer. The impact of surface-roughness scattering as well as quantization on the transport parameters is inherently considered in the Subband Monte Carlo data. These tables are used to model higher-order mobilities as well as the macroscopic relaxation times as a function of the effective field and the carrier temperature. We have studied the influence of the inversion layer concentration on higher-order transport parameters within high fields and show the behavior of these parameters in a quantized system of a UTB SOI MOSFET.