Title :
An analytical 2D current model of Double-Gate Schottky-Barrier MOSFETs
Author :
Yu Ning Zhao ; Gang Du ; Jin Feng Kang ; Xiao Yan Liu ; Ruqi Han
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
In this paper, an analytical 2D current model of Double-Gate Schottky-Barrier MOSFETs (DG SB MOSFETs) is developed, which takes the advantage of the 2D potential distribution. Simulation results have shown that current density undergo notable changes along the channel depth directions, indicating that Ids and Vth calculated by 2D current model achieve a better accuracy than Surf model.
Keywords :
MOSFET; Schottky barriers; current density; analytical 2D current model; channel depth directions; current density; double-gate Schottky-barrier MOSFET; Analytical models; CMOS technology; Current density; Electric potential; Intrusion detection; MOSFETs; Schottky barriers; Semiconductor process modeling; Shape; Tunneling; 2D potential distribution; Schottky-Barrier; Tunneling current;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648255
