DocumentCode
3053603
Title
GA optimized Power MOSFET model
Author
Isa, Dino ; Fong, Low Mei ; Leong, Lindsay ; Kuan, Lau Yee
Author_Institution
Univ. of Nottingham, Jalan Broga
fYear
2007
fDate
8-10 Nov. 2007
Firstpage
120
Lastpage
128
Abstract
A vast majority of public domain MOS modeling software caters to planar devices having drain currents in the mA range. The aim of this endeavor was to modify/simplify a planar MOS model (MOS 9) in order to be able to use a genetic algorithm (GA) to optimize channel width and length for a specific drain current. After confirming that the simplified model could be used for power devices, the power MOS version of the model was then optimized for channel length and width using a genetic algorithm.
Keywords
genetic algorithms; power MOSFET; semiconductor device models; GA optimized power MOSFET model; MOS channel length; MOS channel width; MOS modeling software; drain currents; genetic algorithm; Computer aided manufacturing; Equations; Genetic algorithms; Instruction sets; MOSFET circuits; Parameter extraction; Power MOSFET; Solid modeling; Virtual manufacturing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Manufacturing and Technology, 31st International Conference on
Conference_Location
Petaling Jaya
ISSN
1089-8190
Print_ISBN
978-1-4244-0730-9
Electronic_ISBN
1089-8190
Type
conf
DOI
10.1109/IEMT.2006.4456443
Filename
4456443
Link To Document