Title :
GA optimized Power MOSFET model
Author :
Isa, Dino ; Fong, Low Mei ; Leong, Lindsay ; Kuan, Lau Yee
Author_Institution :
Univ. of Nottingham, Jalan Broga
Abstract :
A vast majority of public domain MOS modeling software caters to planar devices having drain currents in the mA range. The aim of this endeavor was to modify/simplify a planar MOS model (MOS 9) in order to be able to use a genetic algorithm (GA) to optimize channel width and length for a specific drain current. After confirming that the simplified model could be used for power devices, the power MOS version of the model was then optimized for channel length and width using a genetic algorithm.
Keywords :
genetic algorithms; power MOSFET; semiconductor device models; GA optimized power MOSFET model; MOS channel length; MOS channel width; MOS modeling software; drain currents; genetic algorithm; Computer aided manufacturing; Equations; Genetic algorithms; Instruction sets; MOSFET circuits; Parameter extraction; Power MOSFET; Solid modeling; Virtual manufacturing; Voltage;
Conference_Titel :
Electronics Manufacturing and Technology, 31st International Conference on
Conference_Location :
Petaling Jaya
Print_ISBN :
978-1-4244-0730-9
Electronic_ISBN :
1089-8190
DOI :
10.1109/IEMT.2006.4456443
