DocumentCode :
3053665
Title :
Thermal Sensitivity of UBM Adhesion in WLCSP
Author :
Punzalan, Jaime C., Jr.
Author_Institution :
Analog Devices Inc., Gen. Trias
fYear :
2007
fDate :
8-10 Nov. 2007
Firstpage :
150
Lastpage :
154
Abstract :
Developments in WLCSP proved polyimide to be a good alternative to benzocyclobutene as a passivation material and dielectric interlayer. An interface adhesion failure between PI and Ni-V under bump metallurgy was reported after significant exposure to high temperature. This paper aims to provide a better understanding of thermal sensitivity of UBM/passivation adhesion through determination of activation energy. Four devices with different structures were exposed to different temperature settings and exposure times to simulate thermal degradation of UBM adhesion. Results showed that bump shear strength degrade exponentially with exposure to temperature. The time-to-failure equation was determined to follow the Arrhenius model.
Keywords :
adhesion; dielectric materials; metallurgy; passivation; shear strength; thermal analysis; wafer level packaging; wafer-scale integration; Arrhenius model; UBM adhesion; activation energy; bump metallurgy; dielectric interlayer; interface adhesion; passivation material; polyimide; shear strength; thermal degradation simulation; thermal sensitivity; time-to-failure equation; wafer level chip scale packaging; Adhesives; Diffusion bonding; Manufacturing; Packaging machines; Passivation; Polyimides; Resists; Temperature sensors; Wafer bonding; Wafer scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Manufacturing and Technology, 31st International Conference on
Conference_Location :
Petaling Jaya
ISSN :
1089-8190
Print_ISBN :
978-1-4244-0730-9
Electronic_ISBN :
1089-8190
Type :
conf
DOI :
10.1109/IEMT.2006.4456447
Filename :
4456447
Link To Document :
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