Title :
Strain effects on ballistic current in ultrathin DG SOI MOSFETs
Author :
Minari, Hideki ; Mori, Nobuya
Author_Institution :
Div. of Electr., Electron. & Inf. Eng., Osaka Univ., Suita
Abstract :
Atomistic electron transport simulation based on a nonequilibrium Greenpsilas function method and a tight-binding approximation has been performed for h110i-channel strained Si ultrathin double-gate silicon-on-insulator MOSFETs on a (100) substrate. Simulation results show that the tensile strain enhances the ballistic current, while the compressive strain gives opposite results.
Keywords :
Green´s function methods; MOSFET; approximation theory; silicon; Si; atomistic electron transport simulation; ballistic current; nonequilibrium Greenpsilas function method; silicon ultrathin double-gate silicon-on-insulator MOSFET; strain effects; tight-binding approximation; Capacitive sensors; Computational modeling; Crystallization; Electrons; Green´s function methods; MOSFETs; Silicon on insulator technology; Tensile strain; Tunneling; Uniaxial strain; MOSFET; NEGF method; Silicon; Simulation; Strain; Tight-binding;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648259
