DocumentCode :
3053689
Title :
3D Monte Carlo simulation of Tri-Gate MOSFETs using tetrahedral finite elements
Author :
Aldegunde, Manuel ; García-Loureiro, Antonio J. ; Martinez, Antonio ; Kalna, Karol
Author_Institution :
Dept. de Electron. y Comput., Univ. de Santiago de Compostela, Santiago de Compostela
fYear :
2008
fDate :
9-11 Sept. 2008
Firstpage :
153
Lastpage :
156
Abstract :
A parallel 3D Monte Carlo (MC) simulator designed to work on unstructured tetrahedral elements has been developed for the simulations of nano-MOSFETs. The 3D MC code is tested by the simulating a 10 nm gate length double gate (DG) MOSFET with a body thickness of 6.1 nm. We investigate in this device architecture the magnitude of the self-force arising because of the use of tetrahedral elements for the device mesh. Finally, the quantum corrections using density gradient approach are described and applied to a simulation of a 40 nm gate length TriGate MOSFET with a HfO2 gate stack.
Keywords :
MOSFET; Monte Carlo methods; finite element analysis; density gradient; device architecture; nano-MOSFET; parallel 3D Monte Carlo simulator; quantum corrections; size 40 nm; tetrahedral finite elements; tri-gate MOSFET; Computational modeling; Doping; Finite element methods; Geometry; Hafnium oxide; MOSFETs; Monte Carlo methods; Poisson equations; Solid modeling; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
Type :
conf
DOI :
10.1109/SISPAD.2008.4648260
Filename :
4648260
Link To Document :
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