3D Monte Carlo simulation of Tri-Gate MOSFETs using tetrahedral finite elements

Author

Aldegunde, Manuel ; García-Loureiro, Antonio J. ; Martinez, Antonio ; Kalna, Karol

Author_Institution

Dept. de Electron. y Comput., Univ. de Santiago de Compostela, Santiago de Compostela

fYear

2008

fDate

9-11 Sept. 2008

Firstpage

153

Lastpage

156

Abstract

A parallel 3D Monte Carlo (MC) simulator designed to work on unstructured tetrahedral elements has been developed for the simulations of nano-MOSFETs. The 3D MC code is tested by the simulating a 10 nm gate length double gate (DG) MOSFET with a body thickness of 6.1 nm. We investigate in this device architecture the magnitude of the self-force arising because of the use of tetrahedral elements for the device mesh. Finally, the quantum corrections using density gradient approach are described and applied to a simulation of a 40 nm gate length TriGate MOSFET with a HfO₂ gate stack.

Keywords

MOSFET; Monte Carlo methods; finite element analysis; density gradient; device architecture; nano-MOSFET; parallel 3D Monte Carlo simulator; quantum corrections; size 40 nm; tetrahedral finite elements; tri-gate MOSFET; Computational modeling; Doping; Finite element methods; Geometry; Hafnium oxide; MOSFETs; Monte Carlo methods; Poisson equations; Solid modeling; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on

Conference_Location

Hakone

Print_ISBN

978-1-4244-1753-7

Type

conf

DOI

10.1109/SISPAD.2008.4648260

Filename

4648260