Comparative Simulation Study of GNR-FETs using EHT- and TB-based NEGF

Author

Zhang, Ming ; Ran, Qiushi ; Guan, Ximeng ; Zhang, Jinyu ; Wang, Yan ; Yu, Zhiping

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing

fYear

2008

fDate

9-11 Sept. 2008

Firstpage

165

Lastpage

168

Abstract

A comparative study of graphene nanoribbon MOSFET (GNR-FET) using the extended Huckel theory (EHT) and tight-binding (TB) is conducted within the frame of the self-consistent ballistic non-equilibrium Greenpsilas function (NEGF) formalism. The bandgap variation in armchair-edged GNR (aGNR) induced by the length of the edge bond, as well as the transport characteristics with bond length relaxation, is studied in this paper. A strong structural dependence of aGNR-FET performance on the bond length is also observed and discussed.

Keywords

EHT calculations; Green´s function methods; MOSFET; bond lengths; energy gap; graphene; tight-binding calculations; C; EHT-based NEGF; TB-based NEGF; armchair-edged GNR; bandgap variation; bond length relaxation; extended Huckel theory; graphene nanoribbon MOSFET; self-consistent ballistic non-equilibrium Greenpsilas function formalism; tight-binding theory; transport characteristics; Bonding; Chemical elements; Computational modeling; Green´s function methods; MOSFET circuits; Nanoscale devices; Orbital calculations; Photonic band gap; Quantum computing; Radio access networks; EHT; NEGF; graphene nanoribbon;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on

Conference_Location

Hakone

Print_ISBN

978-1-4244-1753-7

Type

conf

DOI

10.1109/SISPAD.2008.4648263

Filename

4648263