DocumentCode
3053768
Title
Simulation of single and multi-layer graphene field-effect devices
Author
Ancona, M.G.
Author_Institution
Naval Res. Lab., Washington, DC
fYear
2008
fDate
9-11 Sept. 2008
Firstpage
169
Lastpage
172
Abstract
Building on previous work, we discuss a diffusion-drift description of electron and hole transport in both single and multi-layer graphene that includes the possibility of a small bandgap. To illustrate the theory, the effects of these new features on field-effect device characteristics are exhibited.
Keywords
electron transport theory; energy gap; field effect devices; graphene; C; bandgap; electron diffusion-drift description; electron transport; graphene field-effect devices; hole transport; multilayer graphene; Charge carrier processes; Differential equations; Electrostatics; Laboratories; Photonic band gap; Radiative recombination; Robustness; Scattering; Silicon carbide; Spontaneous emission; Graphene; bandgap; diffusion-drift; multi-layers;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location
Hakone
Print_ISBN
978-1-4244-1753-7
Type
conf
DOI
10.1109/SISPAD.2008.4648264
Filename
4648264
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