Title :
Simulation of single and multi-layer graphene field-effect devices
Author_Institution :
Naval Res. Lab., Washington, DC
Abstract :
Building on previous work, we discuss a diffusion-drift description of electron and hole transport in both single and multi-layer graphene that includes the possibility of a small bandgap. To illustrate the theory, the effects of these new features on field-effect device characteristics are exhibited.
Keywords :
electron transport theory; energy gap; field effect devices; graphene; C; bandgap; electron diffusion-drift description; electron transport; graphene field-effect devices; hole transport; multilayer graphene; Charge carrier processes; Differential equations; Electrostatics; Laboratories; Photonic band gap; Radiative recombination; Robustness; Scattering; Silicon carbide; Spontaneous emission; Graphene; bandgap; diffusion-drift; multi-layers;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648264
