DocumentCode :
3053788
Title :
Unusually strong temperature dependence of graphene electron mobility
Author :
Akturk, Akin ; Goldsman, Neil
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Maryland, College Park, MD
fYear :
2008
fDate :
9-11 Sept. 2008
Firstpage :
173
Lastpage :
176
Abstract :
We report unusually strong temperature dependence of graphene electron mobility, obtained using full-band Monte Carlo (MC) simulations and experiment. The electron-phonon scattering limited intrinsic graphene electron mobility changes by as much as the fourth power of temperature, Tn (2 < n < 4), in the 200 K to 350 K range. This is in contradiction with the generally observed approximately linear T dependence around room temperature. This linear dependence arises due to the phonon equipartition approximation that gives rise to a linear temperature versus scattering rate relation. The highly nonlinear temperature dependence is reminiscent of transport in the Bloch-Gruneisen temperature range, where phonon energies assisting emissions and absorptions are less than or comparable to thermal energies. In addition, graphene has a conic dispersion relation around its K points or conduction band minima, setting it apart from other materials with parabolic energy-momentum curves around their conduction band minima, and consequently well-defined effective masses.
Keywords :
Monte Carlo methods; approximation theory; electron mobility; phonon dispersion relations; conduction band minima; conic dispersion relation; electron-phonon scattering; full-band Monte Carlo simulations; graphene electron mobility; parabolic energy-momentum curves; phonon equipartition approximation; Absorption; Conducting materials; Dispersion; Electron mobility; Linear approximation; Monte Carlo methods; Phonons; Scattering; Temperature dependence; Temperature distribution; Bloch-Gruneisen temperature dependence; graphene mobility; graphene mobility temperature dependence; temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
Type :
conf
DOI :
10.1109/SISPAD.2008.4648265
Filename :
4648265
Link To Document :
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