DocumentCode
3053816
Title
Electronic and transport properties of GaN/AlGaN quantum dot-based p-i-n diodes
Author
Sacconi, F. ; Romano, G. ; Penazzi, G. ; Povolotskyi, M. ; der Maur, M. Auf ; Pecchia, A. ; Carlo, A. Di
Author_Institution
Dept. Electron. Eng., Univ. of Rome Tor Vergata, Rome
fYear
2008
fDate
9-11 Sept. 2008
Firstpage
177
Lastpage
180
Abstract
Quantum dot (QD) systems based on III-nitride have recently shown to be very promising nanostructures for high-quality light emitters. In this work, electronic and transport properties of AlN/GaN QDs are investigated by means of the TIBERCAD software tool, which allows both a macroscopic and an atomistic approach, with the final aim to couple them in a multiscale simulation environment.
Keywords
CAD; aluminium compounds; electronic engineering computing; gallium compounds; p-i-n diodes; quantum dots; software tools; GaN-AlGaN; TIBERCAD software tool; electronic-transport properties; high-quality light emitters; macroscopic-atomistic approach; multiscale simulation environment; quantum dot-based p-i-n diodes; Aluminum gallium nitride; Capacitive sensors; Computational modeling; Gallium nitride; Light emitting diodes; P-i-n diodes; Piezoelectric polarization; Quantum dots; Quantum mechanics; Software tools;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location
Hakone
Print_ISBN
978-1-4244-1753-7
Type
conf
DOI
10.1109/SISPAD.2008.4648266
Filename
4648266
Link To Document