DocumentCode
3053830
Title
A membrane planar diode for 200 GHz mixing applications
Author
Rollin, J.M. ; Chance, G.I. ; Davies, S.R.
Author_Institution
Dept. of Phys., Univ. of Bath, UK
fYear
2004
fDate
27 Sept.-1 Oct. 2004
Firstpage
205
Lastpage
206
Abstract
The design and fabrication of a monolithically integrated subharmonic mixer for 200 GHz is described. The 1.5 μm diameter Schottky diodes are formed on a 5 micron thick GaAs membrane suspended across the RF waveguide. Predicted mixer performance shows improved conversion loss compared with that of conventional flip-chip diodes.
Keywords
III-V semiconductors; MMIC mixers; Schottky diode mixers; gallium arsenide; lithography; millimetre wave diodes; millimetre wave mixers; sputter etching; waveguides; 1.5 micron; 200 GHz; 5 micron; GaAs; GaAs membrane; RF waveguide; Schottky diodes; conversion loss; lithography; membrane planar diode; monolithically integrated subharmonic mixer; plasma etching; Band pass filters; Biomembranes; Circuits; Dielectric substrates; Gallium arsenide; Metallization; Mixers; Radio frequency; Remote sensing; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN
0-7803-8490-3
Type
conf
DOI
10.1109/ICIMW.2004.1422026
Filename
1422026
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