Title :
Simulation of electronic transport in single nanobelt tin dioxide gas sensors
Author :
Andrei, P. ; Fields, L.L. ; Zheng, J.P. ; Cheng, Y. ; Xiong, P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida A&M Univ. & Florida State Univ., Tallahassee, FL, USA
Abstract :
In this presentation we discuss our approach for the modeling and simulation of single nanobelt metal-oxide chemical sensors with FET structure. Experimental data is used to test the validity of our approach.
Keywords :
chemical sensors; nanobelts; semiconductor device models; FET structure; electronic transport; metal-oxide chemical sensors; single nanobelt tin dioxide gas sensors; Chemical sensors; Chemical technology; Doping; Educational institutions; FETs; Gas detectors; Gases; Hydrogen; Sensor phenomena and characterization; Tin;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378002
