Title :
Carrier type conversion in carbon nanotube field-effect transistors caused by interface fixed charges
Author :
Ohno, Y. ; Moriyama, N. ; Kitamura, T. ; Suzuki, K. ; Kishimoto, S. ; Mizutani, T.
Author_Institution :
Dept. of Quantum Eng., Nagoya Univ., Nagoya, Japan
Abstract :
In this study the effect of deposition of a high-k gate insulator by atomic layer deposition (ALD) technique on electrical characteristics of carbon nanotube field effects transistors (CNFETs) was investigated. Carrier-type conversion was caused by positive fixed-charges at HfO2/SiO2 interface. A technique compatible with Si VLSI technology to control conduction type of CNFETs utilizing interface fixed-charges was proposed.
Keywords :
VLSI; atomic layer deposition; carbon nanotubes; carrier mobility; field effect transistors; insulators; ALD technique; C; VLSI technology; atomic layer deposition; carbon nanotube field-effect transistors; carrier-type conversion; deposition effect; electrical characteristics; high-k gate insulator; positive interface fixed charges; CNTFETs; Channel bank filters; Doping; Gold; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Insulation; Schottky barriers; Very large scale integration;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378006
