Title :
Band calculation for the hexagonal and FCC chalcogenide Ge2Sb2Te5
Author :
Piccinini, E. ; Tsafack, T. ; Buscemi, F. ; Brunetti, R. ; Rudan, M. ; Jacoboni, Carlo
Author_Institution :
Dept. of Electron., Comput. Sci. & Syst., Alma Mater Studiorum Univ. di Bologna, Bologna
Abstract :
The paper addresses the calculation of the band structure for different phases of the chalcogenide Ge2Sb2Te5 compound, which is raising considerable interest in view of the applications to the nonvolatile-memory technology. The band structure is necessary for determining the charge- and heat-transport properties of the material. The band diagram of the face-centered cubic phase, which is the most important one for the operation of phase-change memories, is shown for the first time.
Keywords :
antimony compounds; band structure; chalcogenide glasses; germanium compounds; phase change materials; Ge2Sb2Te5; band diagram; band structure; chalcogenide compound; face-centered cubic phase; phase-change memories; Amorphous materials; Crystalline materials; Crystallization; FCC; Metastasis; Optical distortion; Optical scattering; Phase change memory; Semiconductor materials; Stacking;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648279
