• DocumentCode
    3054078
  • Title

    Band calculation for the hexagonal and FCC chalcogenide Ge2Sb2Te5

  • Author

    Piccinini, E. ; Tsafack, T. ; Buscemi, F. ; Brunetti, R. ; Rudan, M. ; Jacoboni, Carlo

  • Author_Institution
    Dept. of Electron., Comput. Sci. & Syst., Alma Mater Studiorum Univ. di Bologna, Bologna
  • fYear
    2008
  • fDate
    9-11 Sept. 2008
  • Firstpage
    229
  • Lastpage
    232
  • Abstract
    The paper addresses the calculation of the band structure for different phases of the chalcogenide Ge2Sb2Te5 compound, which is raising considerable interest in view of the applications to the nonvolatile-memory technology. The band structure is necessary for determining the charge- and heat-transport properties of the material. The band diagram of the face-centered cubic phase, which is the most important one for the operation of phase-change memories, is shown for the first time.
  • Keywords
    antimony compounds; band structure; chalcogenide glasses; germanium compounds; phase change materials; Ge2Sb2Te5; band diagram; band structure; chalcogenide compound; face-centered cubic phase; phase-change memories; Amorphous materials; Crystalline materials; Crystallization; FCC; Metastasis; Optical distortion; Optical scattering; Phase change memory; Semiconductor materials; Stacking;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
  • Conference_Location
    Hakone
  • Print_ISBN
    978-1-4244-1753-7
  • Type

    conf

  • DOI
    10.1109/SISPAD.2008.4648279
  • Filename
    4648279
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3054078