First-principles calculations for effects of Fluorine impurity in GaN

Author

Lu, Jing ; Gao, Mingzhi ; Zhang, Jinyu ; Wang, Yan ; Yu, Zhiping

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing

fYear

2008

fDate

9-11 Sept. 2008

Firstpage

233

Lastpage

236

Abstract

Fluoride-based plasma treatment has been approved to be an effective technique to make E-Mode GaN-based HEMT by experiments. However, the detailed effect of Fluorine doping in GaN and AlGaN is still unclear and has never been studied theoretically. In this paper, F impurity in GaN material is firstly studied by First Principle Calculations. Sound explanations for the experimental phenomenon are derived from the results and further discuss is presented.

Keywords

Fermi level; III-V semiconductors; ab initio calculations; aluminium compounds; electronic density of states; fluorine; gallium compounds; impurity states; semiconductor doping; vacancies (crystal); wide band gap semiconductors; AlGaN:F; E-Mode HEMT; Fermi level; GaN:F; doping; first-principles calculations; formation energies; impurity; partial orbital of density of state; plasma treatment; vacancy; Aluminum gallium nitride; Doping; Gallium nitride; HEMTs; Impurities; Microelectronics; Orbital calculations; Photonic band gap; Plasma materials processing; Radio frequency; Defects; F impurity; First-principles calculation; GaN;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on

Conference_Location

Hakone

Print_ISBN

978-1-4244-1753-7

Type

conf

DOI

10.1109/SISPAD.2008.4648280

Filename

4648280