DocumentCode
3054130
Title
Analysis of microstructure impact on electromigration
Author
Ceric, H. ; De Orio, Roberto Laeerda ; Cervenka, Johann ; Selberherr, Siegfried
Author_Institution
Inst. for Microelectron., Tech. Univ. Wien, Wien
fYear
2008
fDate
9-11 Sept. 2008
Firstpage
241
Lastpage
244
Abstract
The standard electromigration model is extended by introducing an anisotropic diffusivity which depends on the general stress tensor and a new model of grain boundaries which describes dynamics of mobile vacancies and vacancies trapped in grain boundaries. The application scenario for electromigration simulation is presented. The new calibration and usage concept takes into account microstructural diversity of interconnect inputs. A simulation example illustrating the effect of microstructural variation is presented and discussed.
Keywords
electromigration; grain boundaries; integrated circuit interconnections; anisotropic diffusivity; electromigration; grain boundaries; interconnect inputs; microstructural diversity; microstructure impact; mobile vacancies; Anisotropic magnetoresistance; Atomic force microscopy; Compressive stress; Copper; Electromigration; Grain boundaries; Microstructure; Residual stresses; Tensile stress; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location
Hakone
Print_ISBN
978-1-4244-1753-7
Type
conf
DOI
10.1109/SISPAD.2008.4648282
Filename
4648282
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