Title :
Analysis of microstructure impact on electromigration
Author :
Ceric, H. ; De Orio, Roberto Laeerda ; Cervenka, Johann ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Wien
Abstract :
The standard electromigration model is extended by introducing an anisotropic diffusivity which depends on the general stress tensor and a new model of grain boundaries which describes dynamics of mobile vacancies and vacancies trapped in grain boundaries. The application scenario for electromigration simulation is presented. The new calibration and usage concept takes into account microstructural diversity of interconnect inputs. A simulation example illustrating the effect of microstructural variation is presented and discussed.
Keywords :
electromigration; grain boundaries; integrated circuit interconnections; anisotropic diffusivity; electromigration; grain boundaries; interconnect inputs; microstructural diversity; microstructure impact; mobile vacancies; Anisotropic magnetoresistance; Atomic force microscopy; Compressive stress; Copper; Electromigration; Grain boundaries; Microstructure; Residual stresses; Tensile stress; Thermal stresses;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648282
