• DocumentCode
    3054133
  • Title

    Quaternary AlInGaN photodetectors with MIS structure

  • Author

    Hung, H. ; Chang, S.J. ; Young, S.J. ; Lin, Y.C. ; Wang, S.M. ; Chen, C.H.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this research, effects of thermal annealing on the performance of AlInGaN Metal-Insulator-Semiconductor photodetectors have be investigated by I-V characteristics and responsivity measurement. In addition, Al0.25In0.04Ga0.71N MIS photodetectors with different SiO2 thickness were also be fabricated to verify the the influence of inserting SiO2 layer on performance of MIS photodetectors.
  • Keywords
    III-V semiconductors; MIS devices; annealing; indium compounds; photodetectors; semiconductor device manufacture; silicon compounds; wide band gap semiconductors; Al0.25In0.04Ga0.71N; I-V characteristics; MIS structure; SiO2; metal-insulator-semiconductor photodetectors; quaternary photodetectors; responsivity measurement; thermal annealing; Aluminum gallium nitride; Dark current; Educational institutions; Gallium nitride; Lattices; Leakage current; Photoconductivity; Photodetectors; Photodiodes; Photonic band gap;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378012
  • Filename
    5378012
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3054133