DocumentCode
3054135
Title
Computing the detection of Small Delay Defects caused by resistive opens of nanometer ICs
Author
García-Gervacio, José L. ; Champac, Victor
Author_Institution
Nat. Inst. for Astrophys., Opt. & Electron. (INAOE), Puebla, Mexico
fYear
2010
fDate
24-28 May 2010
Firstpage
126
Lastpage
131
Abstract
Interconnect imperfections have become an issue in modern nanometer technologies. Some of them cause Small Delay Defects (SDDs) which are difficult to detect. Furthermore, those SDDs not detected during testing may pose a reliability problem. Nanometer issues (e.g. process variations, spatial correlations) represent important challenges for traditional delay test methods. In this paper, a technique to compute the probability of detection of resistive opens causing SDDs considering process variations is proposed. This technique is used to estimate the Statistical Fault Coverage (SFC) of a circuit. In order to estimate the SFC of a circuit, the delays are propagated using statistical timing analysis, and the analyzed space of possible delay fault locations is obtained using stratified sampling techniques. This methodology is applied to some ISCAS benchmark circuits. The obtained results show the feasibility of the proposed methodology. Measures can be taken for those circuits presenting non-acceptable fault coverage in order to improve their test quality.
Keywords
fault diagnosis; integrated circuit interconnections; integrated circuit testing; nanoelectronics; statistical analysis; ISCAS benchmark circuits; delay fault locations; delay test methods; nanometer IC technology; probability of detection; small delay defect detection; statistical fault coverage; statistical timing analysis; stratified sampling techniques; test quality; Benchmark testing; Circuit faults; Circuit testing; Delay estimation; Fault location; Integrated circuit interconnections; Probability; Propagation delay; Sampling methods; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Symposium (ETS), 2010 15th IEEE European
Conference_Location
Praha
ISSN
1530-1877
Print_ISBN
978-1-4244-5834-9
Electronic_ISBN
1530-1877
Type
conf
DOI
10.1109/ETSYM.2010.5512771
Filename
5512771
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