Title :
Ion implantation model for channeling through multi-layers
Author :
Yamanaka, T. ; Nishi, K. ; Mochizuki, M. ; Hayashi, H. ; Fukuda, K. ; Nguyen, H.D. ; Sasaki, K. ; Doi, Y.
Author_Institution :
Kinki Univ. Tech. Col., Kumano
Abstract :
A new implantation model which considers effects of covered layers to channeling effects in substrate is proposed. Physics of energy loss and scattering in covered layers are summarized to a simple expression. The model is easy to implement to any existing process simulators, and accuracy is drastically improved not only for advanced devices but also for legacy devices.
Keywords :
Monte Carlo methods; ion implantation; energy loss; energy scattering; ion implantation model; legacy devices; multilayers channeling; Analytical models; Crystallization; Energy loss; Ion implantation; Mie scattering; Monte Carlo methods; Physics; Semiconductor process modeling; Silicon; Substrates; Ion implantation; Modeling; Monte Carlo model; Silicon; Simulation;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648284
