DocumentCode
3054172
Title
Ion implantation model for channeling through multi-layers
Author
Yamanaka, T. ; Nishi, K. ; Mochizuki, M. ; Hayashi, H. ; Fukuda, K. ; Nguyen, H.D. ; Sasaki, K. ; Doi, Y.
Author_Institution
Kinki Univ. Tech. Col., Kumano
fYear
2008
fDate
9-11 Sept. 2008
Firstpage
249
Lastpage
252
Abstract
A new implantation model which considers effects of covered layers to channeling effects in substrate is proposed. Physics of energy loss and scattering in covered layers are summarized to a simple expression. The model is easy to implement to any existing process simulators, and accuracy is drastically improved not only for advanced devices but also for legacy devices.
Keywords
Monte Carlo methods; ion implantation; energy loss; energy scattering; ion implantation model; legacy devices; multilayers channeling; Analytical models; Crystallization; Energy loss; Ion implantation; Mie scattering; Monte Carlo methods; Physics; Semiconductor process modeling; Silicon; Substrates; Ion implantation; Modeling; Monte Carlo model; Silicon; Simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location
Hakone
Print_ISBN
978-1-4244-1753-7
Type
conf
DOI
10.1109/SISPAD.2008.4648284
Filename
4648284
Link To Document