• DocumentCode
    3054222
  • Title

    Analytical model and Monte Carlo Simulations for Phosphorus implantation in Germanium including ion channeling

  • Author

    Hellings, Geert ; Eneman, Geert ; Meuris, Marc ; De Meyer, K.

  • Author_Institution
    Interuniv. Microelectron. Center (IMEC), Heverlee
  • fYear
    2008
  • fDate
    9-11 Sept. 2008
  • Firstpage
    253
  • Lastpage
    256
  • Abstract
    A Monte Carlo simulator for dopant implantation (TaurusMC) was successfully calibrated for the implantation of phosphorus in germanium, based on both SIMS measurements and TEM. To avoid time-consuming Monte Carlo simulations, an analytical model was proposed based on the description of as-implanted profiles with a dual Pearson curve. This model covers a large range of energy (15-180 keV) and doses (1012-1016 cm-2), of interest to the ongoing scaling efforts of Ge MOSFETs.
  • Keywords
    MOSFET; Monte Carlo methods; ion implantation; phosphorus; semiconductor doping; MOSFET; Monte Carlo simulations; dopant implantation; dual Pearson curve; ion channeling; phosphorus implantation; Analytical models; Atomic measurements; Calibration; Germanium; Ion implantation; Lattices; MOSFETs; Monte Carlo methods; Semiconductor process modeling; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
  • Conference_Location
    Hakone
  • Print_ISBN
    978-1-4244-1753-7
  • Type

    conf

  • DOI
    10.1109/SISPAD.2008.4648285
  • Filename
    4648285
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3054222