Title :
Analytical model and Monte Carlo Simulations for Phosphorus implantation in Germanium including ion channeling
Author :
Hellings, Geert ; Eneman, Geert ; Meuris, Marc ; De Meyer, K.
Author_Institution :
Interuniv. Microelectron. Center (IMEC), Heverlee
Abstract :
A Monte Carlo simulator for dopant implantation (TaurusMC) was successfully calibrated for the implantation of phosphorus in germanium, based on both SIMS measurements and TEM. To avoid time-consuming Monte Carlo simulations, an analytical model was proposed based on the description of as-implanted profiles with a dual Pearson curve. This model covers a large range of energy (15-180 keV) and doses (1012-1016 cm-2), of interest to the ongoing scaling efforts of Ge MOSFETs.
Keywords :
MOSFET; Monte Carlo methods; ion implantation; phosphorus; semiconductor doping; MOSFET; Monte Carlo simulations; dopant implantation; dual Pearson curve; ion channeling; phosphorus implantation; Analytical models; Atomic measurements; Calibration; Germanium; Ion implantation; Lattices; MOSFETs; Monte Carlo methods; Semiconductor process modeling; Temperature;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648285
