Title :
Convergence properties of density gradient quantum corrections in 3D ensemble Monte Carlo Simulations
Author :
Riddet, Craig ; Asenov, Asen
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow
Abstract :
A methodology to include quantum corrections in 3D Monte Carlo simulations is presented, based on the Density Gradient formalism. Three flavours are introduced, with increasing degrees of self-consistency between the current, field and quantum correction and compared in terms of accuracy and impact on the current voltage characteristics.
Keywords :
MOSFET; Monte Carlo methods; semiconductor device models; 3D ensemble Monte Carlo simulations; density gradient quantum correction; Computational modeling; Convergence; Current-voltage characteristics; Electrons; MOSFETs; Maxwell equations; Monte Carlo methods; Particle scattering; Quantum computing; Rough surfaces; Density Gradient; Monte Carlo; quantum corrections;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648287
